Title :
Optimized X and Ku band GaAs MMIC varactor tuned FET oscillators
Author :
Reese, E., Jr. ; Beall, J.M.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
The modeling techniques used to understand and predict the phenomena of frequency hops and holes in X-band and Ku band monolithic microwave integrated circuit (MMIC) voltage-controlled oscillators (VCOs) are described. The use of nonlinear circuit analysis has led to circuit improvements, including a novel lateral varactor structure compatible with FET devices and uniform ion-implanted material, realizing better Q. Devices were fabricated and tested, confirming the validity of the modeling and design approaches. Monolithic X-band and Ku-band VCOs realized continuous tuning over 5.9-12.6 GHz and 10.6-20.4 GHz, respectively; continuous tuning was retained over the temperature range -55 to +90 degrees C.<>
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; microwave integrated circuits; microwave oscillators; nonlinear network analysis; tuning; varactors; variable-frequency oscillators; -55 to 90 degC; 5.9 to 20.4 GHz; FET; GaAs; III-V semiconductors; Ku band; MMIC; SHF; VCOs; VFO; X-band; continuous tuning; frequency hops; holes; lateral varactor structure; modeling techniques; monolithic microwave integrated circuit; nonlinear circuit analysis; uniform ion-implanted material; varactor tuned; voltage-controlled oscillators; Frequency; Integrated circuit modeling; MMICs; Microwave FET integrated circuits; Microwave devices; Microwave integrated circuits; Microwave theory and techniques; Monolithic integrated circuits; Predictive models; Tuning;
Conference_Titel :
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location :
New York, NY, USA
DOI :
10.1109/MWSYM.1988.22080
