DocumentCode
3187418
Title
Spin relaxation measurement of the spin-polarized electrons during transport in GaAs using double-quantum well heterostructure
Author
Sato, Y. ; Yamaguchi, M. ; Takahashi, Y. ; Kawamura, Y. ; Kawaguchi, H.
Author_Institution
Dept. of Electr. Eng., Yamagata Univ., Yonezawa, Japan
fYear
2003
fDate
22-27 June 2003
Firstpage
186
Abstract
The study deals with spin relaxation measurement of the spin-polarized electrons during transport in GaAs using double-quantum well heterostructure. Direct observation of spin conservation of electrons during the vertical field-driven transport in 1 μm-long p-GaAs in the time-resolved photoluminescence measurements at 10 K is reported.
Keywords
III-V semiconductors; electron relaxation time; gallium arsenide; photoluminescence; semiconductor quantum wells; time resolved spectra; 10 K; GaAs; double-quantum well heterostructure; spin conservation; spin relaxation; spin-polarized electrons; time-resolved photoluminescence; Electric variables measurement; Electron optics; Electron traps; Gallium arsenide; Optical polarization; Optical pulses; Photoluminescence; Physics; Voltage; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference, 2003. EQEC '03. European
Print_ISBN
0-7803-7733-8
Type
conf
DOI
10.1109/EQEC.2003.1314043
Filename
1314043
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