Title :
Spin relaxation measurement of the spin-polarized electrons during transport in GaAs using double-quantum well heterostructure
Author :
Sato, Y. ; Yamaguchi, M. ; Takahashi, Y. ; Kawamura, Y. ; Kawaguchi, H.
Author_Institution :
Dept. of Electr. Eng., Yamagata Univ., Yonezawa, Japan
Abstract :
The study deals with spin relaxation measurement of the spin-polarized electrons during transport in GaAs using double-quantum well heterostructure. Direct observation of spin conservation of electrons during the vertical field-driven transport in 1 μm-long p-GaAs in the time-resolved photoluminescence measurements at 10 K is reported.
Keywords :
III-V semiconductors; electron relaxation time; gallium arsenide; photoluminescence; semiconductor quantum wells; time resolved spectra; 10 K; GaAs; double-quantum well heterostructure; spin conservation; spin relaxation; spin-polarized electrons; time-resolved photoluminescence; Electric variables measurement; Electron optics; Electron traps; Gallium arsenide; Optical polarization; Optical pulses; Photoluminescence; Physics; Voltage; Wavelength measurement;
Conference_Titel :
Quantum Electronics Conference, 2003. EQEC '03. European
Print_ISBN :
0-7803-7733-8
DOI :
10.1109/EQEC.2003.1314043
