Title :
22 GHz performance of the permeable base transistor
Author :
Kushner, L.J. ; Hollis, M.A. ; Mathews, R.H. ; Nichols, K.B. ; Bozler, C.O.
Author_Institution :
MIT Lincoln Lab., Lexington, MA, USA
Abstract :
Small-signal performance and power performance of GaAs permeable-base transistors (PBTs) at 22 GHz are reported. A small-signal gain of 14.5 dB was demonstrated over a 1-GHz bandwidth from a device having a 3200-AA-periodicity base grating and an 8*20 mu m/sup 2/ active area. A similar device, biased for class AB operation, achieved 45% power-added efficiency with an output power of 83 mW, and an associated gain of 5.7 dB. An output power of 210 mW with 4.7-dB of gain and 37% efficiency were obtained from a larger device having an 8*40 mu m/sup 2/ active area. A pair of these large devices in parallel delivered 370 mW with 3.7 dB gain and 33% efficiency, and 410 mW with 3.1 dB gain and 31% efficiency.<>
Keywords :
III-V semiconductors; bipolar transistors; gallium arsenide; power transistors; solid-state microwave devices; 22 GHz; 3.1 to 14.5 dB; 31 to 45 percent; 83 to 410 mW; GaAs; III-V semiconductors; SHF; class AB operation; microwave power transistor; permeable base transistor; power performance; power-added efficiency; small-signal gain; Circulators; Couplers; FETs; Frequency; Gain; Gallium arsenide; Gratings; Power generation; Transmitters; Tungsten;
Conference_Titel :
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location :
New York, NY, USA
DOI :
10.1109/MWSYM.1988.22089