On the development of RFID tags in TFT technology

Author

Chen, Yi-Jan Emery ; Lee, Yuan-Jiang ; Yu, Yueh-Hua ; Huang, Shu-Mei

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2009

fDate

7-10 Dec. 2009

Firstpage

2244

Lastpage

2247

Abstract

Low temperature polycrystalline silicon (LTPS) thin film transistor (TFT) is an emerging technology to manufacture active matrix liquid crystal displays (AMLCDs). With its maximum frequency of oscillation f_max reaching beyond 1 GHz, it becomes feasible to develop integrated circuits in LTPS TFT technology to facilitate system on panel or system on display. This paper investigates the LTPS TFT characteristics for developing RFID tags. An equivalent circuit model was proposed for LTPS TFT RFIC design. An ASK demodulator for the RFID tag was demonstrated using 3Â¿m LTPS TFT technology. The demodulator can operate at the carrier frequency of 13.56 MHz and the highest data rate is 100 kb/s.

Keywords

liquid crystal displays; radiofrequency identification; thin film transistors; RFID tags; active matrix liquid crystal displays; bit rate 100 kbit/s; integrated circuits; low temperature polycrystalline silicon; size 3 mum; thin film transistor; Active matrix liquid crystal displays; Active matrix technology; Demodulation; Frequency; Integrated circuit technology; Manufacturing; RFID tags; Silicon; Temperature; Thin film transistors; RFID; low temperature polycrystalline silicon; system on display (SoD); system on panel (SoP);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2009. APMC 2009. Asia Pacific

Conference_Location

Singapore

Print_ISBN

978-1-4244-2801-4

Electronic_ISBN

978-1-4244-2802-1

Type

conf

DOI

10.1109/APMC.2009.5385428

Filename

5385428