A 22-30GHz balanced SiGe BiCMOS frequency doubler with 47dBc suppression and low input drive power

Author

Sun, Jiangtao ; Liu, Qing ; Suh, Yong-Ju ; Shibata, Takayuki ; Yoshimasu, Toshihiko

Author_Institution

Grad. Sch. of Inf., Production & Syst., Waseda Univ., Kitakyushu, Japan

fYear

2009

fDate

7-10 Dec. 2009

Firstpage

2260

Lastpage

2263

Abstract

A broadband balanced frequency doubler has been fabricated in 0.25-Â¿m SOI SiGe BiCMOS technology to operate from 22 GHz to 30 GHz with low input drive power. Its fundamental frequency suppression of better than 30 dBc can be achieved by an internal low pass LC filter in the 22-30 GHz; moreover, maximum suppression is 47 dBc in the operation band. In addition, a pair of SLCC (series LC circuit) parallel with the up input can result in high suppression with low input drive power. Maximum conversion gain of -6 dB can be obtained in the input drive power as low as -1 dBm.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC; frequency multipliers; low-pass filters; semiconductor materials; SiGe; broadband balanced BiCMOS frequency doubler; frequency 22 GHz to 30 GHz; fundamental frequency suppression; gain -6 dB; internal low pass LC filter; low input drive power; maximum conversion gain; series LC circuit; size 0.25 mum; Band pass filters; BiCMOS integrated circuits; Circuit topology; Energy consumption; Frequency conversion; Germanium silicon alloys; Impedance matching; Millimeter wave technology; Silicon germanium; Voltage-controlled oscillators; Doubler; SiGe BiCMOS; broadband; high suppression; low drive power;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2009. APMC 2009. Asia Pacific

Conference_Location

Singapore

Print_ISBN

978-1-4244-2801-4

Electronic_ISBN

978-1-4244-2802-1

Type

conf

DOI

10.1109/APMC.2009.5385432

Filename

5385432