A monolithic L-band limiting amplifier and dual-modulus prescaler GaAs integrated circuit

Author

Geissberger, A.E. ; Sadler, R.A. ; Singh, H.P. ; Lewis, G.K. ; Bahl, I.J. ; Balzan, M.L.

Author_Institution

ITT, Roanoke, VA, USA

fYear

1988

fDate

25-27 May 1988

Firstpage

569

Abstract

Fabrication details, radio-frequency (RF) yield results, and RF performance vs. temperature results are presented for an emitter-coupled-logic (ECL)-compatible L-band, limiting dual-modulus (/10/11) prescaler. This process for monolithic integration of analog and digital circuit functions uses refractory-self-aligned-gate FET technology. When tested with -22 dBm input signal power, one lot of six wafers had a total RF chip yield of 19%, with a best-wafer yield of 43%. The average operating frequency was 1.45 GHz (standard deviation (SD)=51 MHz) with an average power dissipation of 696 mW (SD=23 mW).<>

Keywords

III-V semiconductors; field effect integrated circuits; gallium arsenide; microwave amplifiers; microwave integrated circuits; scaling circuits; 1.45 GHz; 696 mW; ECL compatibility; GaAs; L-band; RF chip yield; RF performance; analogue circuit functions; average operating frequency; average power dissipation; digital circuit functions; dual-modulus prescaler; emitter-coupled-logic; integrated circuit; limiting amplifier; monolithic integration; refractory-self-aligned-gate FET technology; Dielectrics; FETs; Fabrication; Gallium arsenide; Implants; L-band; Monolithic integrated circuits; Radio frequency; Radiofrequency amplifiers; Resists;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1988., IEEE MTT-S International

Conference_Location

New York, NY, USA

Type

conf

DOI

10.1109/MWSYM.1988.22099

Filename

22099