Title :
Dual-band SiGe HBT Clapp VCOs with a novel band-switching technique of controlling a negative resistance bandwidth
Author :
Itoh, Yasushi ; Cao, Wei
Author_Institution :
Dept. of Electr. & Electron. Eng., Shonan Inst. of Technol., Fujisawa, Japan
Abstract :
A dual-band SiGe HBT Clapp VCO for the next generation multi-band and multi-mode wireless applications is presented. It employs a novel band-switching technique of controlling a negative resistance bandwidth for a fixed dual-band resonator. The negative resistance bandwidth can be switched by controlling a supply bias voltage as well as a shunt inductor of the common-collector HBT. The implemented 0.35-¿m SiGe HBT Clapp VCO has achieved a dual-band performance from 0.666 to 0.674 GHz for a VCC of 4 V and from 1.521 to 1.536 GHz for a VCC of 2 V. The phase noise at 100 kHz offset is -120.2dBc/Hz at 0.67 GHz and -112.5dBc/Hz at 1.53 GHz. This is the first report on the multi-band SiGe HBT Clapp VCO with oscillation bandwidths switched by a supply bias voltage.
Keywords :
VHF oscillators; heterojunction bipolar transistors; voltage-controlled oscillators; SiGe; bandwidth 0.666 GHz to 0.674 GHz; bandwidth 1.521 GHz to 1.536 GHz; common-collector HBT; dual-band HBT Clapp VCOs; fixed dual-band resonator; frequency 100 kHz; multiband wireless application; multimode wireless application; negative resistance bandwidth; novel band-switching technique; shunt inductor; size 0.35 mum; supply bias voltage; voltage 2 V; voltage 4 V; Bandwidth; Dual band; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; Phase noise; Shunt (electrical); Silicon germanium; Voltage control; Voltage-controlled oscillators; Clapp VCO; SiGe HBT; microwaves oscillators; multi-band; voltage controlled oscillators;
Conference_Titel :
Microwave Conference, 2009. APMC 2009. Asia Pacific
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2801-4
Electronic_ISBN :
978-1-4244-2802-1
DOI :
10.1109/APMC.2009.5385442
