Title :
Monolithic and discrete mm-wave InP lateral transferred-electron oscillators
Author :
Binari, S.C. ; Neidert, R.E. ; Meissner, K.E.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
Abstract :
A lateral InP transferred-electron device structure was investigated and its application to millimeter-wave monolithic integrated circuits (MMICs) was demonstrated. The discrete devices were tested in a tunable waveguide cavity. These tests showed a continuous-wave (CW) power output of 29.1 mW with a DC-to-RF conversion efficiency of 6.7% at 29.9 GHz. At W-band, CW power outputs of 0.9 mW and 0.4 mW were obtained at 75.2 GHz and 98.5 GHz, respectively. An 80-GHz monolithic oscillator incorporating the lateral transferred-electron devices is also described. Without external tuning, the circuit oscillated at 79.9 GHz with a pulsed power output of 0.1 mW.<>
Keywords :
Gunn oscillators; III-V semiconductors; indium compounds; microwave integrated circuits; microwave oscillators; solid-state microwave devices; 0.4 mW; 0.9 mW; 29.1 mW; 29.9 GHz; 75.2 GHz; 80 GHz; 98.5 GHz; CW; DC-to-RF conversion efficiency; InP; W-band; lateral transferred-electron oscillators; millimeter-wave monolithic integrated circuits; power output; pulsed power output; tunable waveguide cavity; Anodes; Cathodes; Conductivity; Fabrication; Indium phosphide; Integrated circuit technology; Laboratories; Metallization; Monolithic integrated circuits; Oscillators;
Conference_Titel :
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location :
New York, NY, USA
DOI :
10.1109/MWSYM.1988.22124
