Title :
On the large-signal modeling of AlGaN/GaN HEMTs for RF switching-mode power amplifiers design
Author :
Jarndal, Anwar ; Aflaki, Pouya ; Degachi, Louay ; Birafane, Ahmed ; Kouki, Ammar ; Negra, Renato ; Ghannouchi, Fadhel M.
Author_Institution :
Comput. Eng. Dept., Hodeidah Univ., Hodeidah, Yemen
Abstract :
A large-signal model for GaN HEMT transistor suitable for designing switching-mode power amplifiers (SMPAs) is presented along with its parameters extraction procedure. This model is relatively easy to construct and implement in CAD software since it requires only DC and S-parameter measurements. The modeling procedure was applied to a 4-W packaged GaN-on-Si HEMT and the developed model is validated by comparing its small- and large-signal simulation to measured data. The model has been employed for designing a switching-mode inverse class-F power amplifier. Very good agreement between the amplifier simulation and measurement shows the validity of the model.
Keywords :
CAD; III-V semiconductors; aluminium compounds; equivalent circuits; gallium compounds; high electron mobility transistors; power amplifiers; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; CAD software; DC measurement; RF switching-mode power amplifier design; S-parameter measurement; amplifier simulation; inverse class-F power amplifier; large-signal modeling; large-signal simulation; packaged HEMT; parameter extraction procedure; power 4 W; small-signal simulation; Aluminum gallium nitride; Design automation; Gallium nitride; HEMTs; MODFETs; Parameter extraction; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Scattering parameters; GaN HEMT; large-signal modeling; switching-mode power amplifier; table-based method;
Conference_Titel :
Microwave Conference, 2009. APMC 2009. Asia Pacific
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2801-4
Electronic_ISBN :
978-1-4244-2802-1
DOI :
10.1109/APMC.2009.5385456
