Title :
Characterization techniques for temperature-dependent experimental analysis of microwave transistors
Author :
Caddemi, Alina ; Donato, N. ; Sannini, M.
Author_Institution :
Dipt. di Fisica, Messina Univ., Italy
Abstract :
In our research work the effects of temperature on DC behavior, small signal and noise performance of several low-noise transistors at microwave frequencies were investigated by means of different experimental systems down to cryogenic levels. We here present the results of such an extensive investigation together with the details of the experimental procedures followed. The on-wafer cooling set-up was designed and realized in our lab and it exhibited a very good performance characterized by fast settling times. Clear self-heating effects were observed in DC behavior of on-wafer pseudomorphic HEMT´s tested over the 220-320 K temperature range.
Keywords :
cooling; cryogenic electronics; electric noise measurement; high electron mobility transistors; microwave field effect transistors; microwave measurement; microwave transistors; semiconductor device measurement; semiconductor device noise; 220 to 320 K; DC behavior; PHEMT; characterization techniques; cryogenic levels; fast settling times; low-noise transistors; microwave frequencies; microwave transistors; noise performance; onwafer cooling set-up; pseudomorphic HEMT; self-heating effects; small signal performance; temperature-dependent experimental analysis; Circuit noise; Circuit testing; Cryogenics; Microwave devices; Microwave measurements; Microwave theory and techniques; Microwave transistors; Performance evaluation; Temperature distribution; Temperature sensors;
Conference_Titel :
Instrumentation and Measurement Technology Conference, 2001. IMTC 2001. Proceedings of the 18th IEEE
Conference_Location :
Budapest
Print_ISBN :
0-7803-6646-8
DOI :
10.1109/IMTC.2001.929530
