Characterization techniques for temperature-dependent experimental analysis of microwave transistors

Author

Caddemi, Alina ; Donato, N. ; Sannini, M.

Author_Institution

Dipt. di Fisica, Messina Univ., Italy

Volume

3

fYear

2001

fDate

21-23 May 2001

Firstpage

1893

Abstract

In our research work the effects of temperature on DC behavior, small signal and noise performance of several low-noise transistors at microwave frequencies were investigated by means of different experimental systems down to cryogenic levels. We here present the results of such an extensive investigation together with the details of the experimental procedures followed. The on-wafer cooling set-up was designed and realized in our lab and it exhibited a very good performance characterized by fast settling times. Clear self-heating effects were observed in DC behavior of on-wafer pseudomorphic HEMT´s tested over the 220-320 K temperature range.

Keywords

cooling; cryogenic electronics; electric noise measurement; high electron mobility transistors; microwave field effect transistors; microwave measurement; microwave transistors; semiconductor device measurement; semiconductor device noise; 220 to 320 K; DC behavior; PHEMT; characterization techniques; cryogenic levels; fast settling times; low-noise transistors; microwave frequencies; microwave transistors; noise performance; onwafer cooling set-up; pseudomorphic HEMT; self-heating effects; small signal performance; temperature-dependent experimental analysis; Circuit noise; Circuit testing; Cryogenics; Microwave devices; Microwave measurements; Microwave theory and techniques; Microwave transistors; Performance evaluation; Temperature distribution; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Instrumentation and Measurement Technology Conference, 2001. IMTC 2001. Proceedings of the 18th IEEE

Conference_Location

Budapest

ISSN

1091-5281

Print_ISBN

0-7803-6646-8

Type

conf

DOI

10.1109/IMTC.2001.929530

Filename

929530