Title :
The Effects of Different Parameters in Crosstalk Noise Modeling
Author :
Eghbalkhah, Behzad ; Masoumi, Nasser
Author_Institution :
VLSI Research Group, Department of Electrical and Computer Engineering, Faculty of Engineering, University of Tehran North Kargar Ave., P.O. Box 14395/515, Tehran, Iran
Abstract :
This work uses a new model for dealing with crosstalk noise in interconnects of VLSI systems. The model considers self-inductance and mutual inductance of interconnects in 130 nm technology. The peak noise voltage is measured using HSPICE simulations. The effects of spacing, length and driver of victim line are considered. Also this work shows that for interconnects larger than 1mm; there is no need to involve self and mutual inductances in the model.
Keywords :
CMOS technology; Capacitance; Crosstalk; Inductance; Integrated circuit interconnections; Noise measurement; Power system interconnection; Semiconductor device modeling; Very large scale integration; Voltage measurement;
Conference_Titel :
Microelectronics, 2005. ICM 2005. The 17th International Conference on
Print_ISBN :
0-7803-9262-0
DOI :
10.1109/ICM.2005.1590048
