DocumentCode :
3189222
Title :
A miniature switching phase shifter in 0.18-µm CMOS
Author :
Tseng, Wei-Je ; Lin, Chin-Shen ; Tsai, Zuo-Min ; Wang, Huei
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2009
fDate :
7-10 Dec. 2009
Firstpage :
2132
Lastpage :
2135
Abstract :
A miniature 3-bit switching phase shifter using standard 0.18-μm CMOS process is presented in this paper. By using thin-film meander-line to shrink the size of inductor, the chip area can be reduced to 0.285 mm2. This circuit demonstrates an RMS phase error of smaller than 5.3° and an RMS amplitude error of smaller than 1.3 dB from 21-29 GHz. The average insertion loss and return loss at 24 GHz are 11 and 7 dB, respectively. To the authors´ knowledge, this phase shifter achieves lowest RMS phase error and insertion loss among all Si-based switching phase shifters above 10 GHz.
Keywords :
CMOS analogue integrated circuits; MMIC phase shifters; switching circuits; CMOS process; RMS phase error; average insertion loss; frequency 21 GHz to 29 GHz; inductor; loss 11 dB; loss 7 dB; miniature 3-bit switching phase shifter; return loss; size 0.18 μm; thin-film meander-line; CMOS process; Communication switching; Impedance; Insertion loss; MMICs; Microstrip; Phase shifters; Resistors; Thin film circuits; Thin film inductors; CMOS; monolithic microwave integrated circuit (MMIC); phase shifters; phased-arrays;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2009. APMC 2009. Asia Pacific
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2801-4
Electronic_ISBN :
978-1-4244-2802-1
Type :
conf
DOI :
10.1109/APMC.2009.5385505
Filename :
5385505
Link To Document :
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