Title :
Ultra low voltage switched opamp ΣΔ modulator for portable applications
Author :
Sauervrey, J. ; Thewes, Roland
Author_Institution :
Corp. Res., Infineon Technol. AG, Munich, Germany
Abstract :
A ΣΔ modulator for portable applications is presented operating within a large window of supply voltages. A third order fully differential non-cascaded modulator structure is designed in switched-opamp (SO) technique with common mode level shift. The circuit is realized in 0.18 μm n-well CMOS technology and occupies an area of 0.17 mm2. Measurements are performed for supply voltages between 0.61 V and 1.5 V. Signal-to-noise ratios (SNR) of 72 dB and 64.5 dB and signal-to-noise-and-distortion ratios (SNDR) of 70 dB and 64 dB are obtained at 16 kHz signal bandwidth at supply voltages of 0.9 V and 0.75 V, respectively
Keywords :
CMOS integrated circuits; low-power electronics; sigma-delta modulation; switched networks; 0.18 micron; 0.61 to 1.5 V; 0.75 V; 0.9 V; 16 kHz; common mode level shift; fully differential noncascaded modulator structure; n-well CMOS technology; portable applications; signal bandwidth; signal-to-noise ratios; signal-to-noise-and-distortion ratios; supply voltages; switched opamp ΣΔ modulator; ultra low voltage circuits; Analog circuits; CMOS technology; Circuit stability; Circuit topology; Delay effects; Delta modulation; Filters; Low voltage; Operational amplifiers; Threshold voltage;
Conference_Titel :
Custom Integrated Circuits, 2001, IEEE Conference on.
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-6591-7
DOI :
10.1109/CICC.2001.929719
