Title :
High sensitivity silicon magnetic field detector
Author_Institution :
Nat. Microelectron. Res. Centre, Univ. Coll. Cork, Ireland
Abstract :
A CMOS magnetic field sensitive oscillator (MAGOSC) is presented. This device, in response to a 2.1 Gauss magnetic field, registered a 16.6 Hz change in frequency while running on 27 μA supply. An improved noise reduction technique ensured this was over three sigma above the noise floor, yielding a high sensitivity device for this power level. Thus demonstrating the potential for very high sensitivity silicon magnetic field detectors
Keywords :
MOSFET; electric sensing devices; elemental semiconductors; magnetic field measurement; magnetic sensors; silicon; 2.1 gauss; 27 muA; MAGFETs; MAGOSC; Si; magnetic field detector; magnetic field sensitive oscillator; noise reduction technique; sensitivity; Detectors; Frequency; Low-frequency noise; Magnetic field measurement; Magnetic fields; Magnetic noise; Magnetic sensors; Noise reduction; Semiconductor device noise; Silicon;
Conference_Titel :
Custom Integrated Circuits, 2001, IEEE Conference on.
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-6591-7
DOI :
10.1109/CICC.2001.929734
