Sub-millimeter wave CMOS integrated circuits and systems

Key components of systems operating at high millimeter wave and sub-millimeter wave/terahertz frequencies, a 140-GHz fundamental mode voltage controlled oscillator (VCO) in 90-nm CMOS, a 410-GHz push-push VCO with an on-chip antenna and a 553-GHz 4-push VCO with an on-chip antenna in 45-nm CMOS, and a 125-GHz Schottky diode frequency doubler, a 50-GHz phase locked loop with a frequency doubled output at 100 GHz and a 280-GHz Schottky diode detector in 130-nm CMOS are demonstrated. Based on these as well as other works in the literature, and the performance trends of NMOS transistors and Schottky diodes fabricated in CMOS, paths to terahertz CMOS circuits and systems including key challenges that must be addressed are suggested. The terahertz CMOS is a new opportunity for the silicon integrated circuits community.