Title :
A 20 GHz FET amplifier in an integrated finline/microstrip configuration
Author :
Ruxton, James ; Vahldieck, Ruediger ; Hoefer, Wolfgang J R
Author_Institution :
BTI, Bolriet, Ont., Canada
Abstract :
A description is given of the design and fabrication of an 20-GHz FET amplifier that uses an integrated combination of finline and microstrip. A broadband finline-to-microstrip transition is presented. The transition incorporates a biasing network to provide unconditional stability. The single-stage amplifier, including transitions, provides better than 6-dB gain over a 1.25-GHz bandwidth.<>
Keywords :
field effect transistor circuits; hybrid integrated circuits; microwave amplifiers; solid-state microwave circuits; waveguide couplers; 1.25 GHz; 20 GHz; 20-GHz FET amplifier; 6 dB; SHF; bandwidth; biasing network; broadband finline-to-microstrip transition; design; fabrication; finline; gain; microstrip; single-stage amplifier; unconditional stability; Bandwidth; Broadband amplifiers; Capacitance; FETs; Finline; Frequency; Gain; Microstrip; Millimeter wave technology; Millimeter wave transistors;
Conference_Titel :
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location :
New York, NY, USA
DOI :
10.1109/MWSYM.1988.22145
