DocumentCode
3189937
Title
Small-signal equivalent circuit scaling properties of AlGaAs/GaAs HBTs
Author
Der-woei Wu ; Fukuda, Motohisa ; Yun, Y.-H. ; Miller, Douglas L.
Author_Institution
Corp. R&D, M/A-COM Inc, Lowell, MA, USA
fYear
1995
fDate
16-20 May 1995
Firstpage
631
Abstract
The equivalent circuit model parameters are directly extracted from measured S-parameters and then carefully correlated with the device physical layout to provide accurate scaling rules for the design and modeling of HBTs. For devices fabricated with a scaling factor of 4, the predicted MSG/MAG is less than 0.5 dB while normalized error in S-parameters is less than 10% of measurements for the frequency range of 0.045 to 26 GHz.<>
Keywords
III-V semiconductors; S-parameters; aluminium compounds; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device models; 0.045 to 26 GHz; AlGaAs-GaAs; HBTs; S-parameters; device physical layout; equivalent circuit model parameters; scaling properties; scaling rules; small-signal equivalent circuit; Capacitance; Electrical resistance measurement; Equivalent circuits; Frequency response; Gallium arsenide; Geometry; Heterojunction bipolar transistors; Laboratories; Performance analysis; Scattering parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location
Orlando, FL, USA
ISSN
0149-645X
Print_ISBN
0-7803-2581-8
Type
conf
DOI
10.1109/MWSYM.1995.405927
Filename
405927
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