Title :
Orthogonal summing and power combining network in a 65-nm all-digital RF I/Q modulator
Author :
Alavi, Morteza S. ; Staszewski, Robert B. ; De Vreede, Leo C N ; Long, John R.
Author_Institution :
ERL/DIMES, Delft Univ. of Technol., Delft, Netherlands
fDate :
Nov. 30 2011-Dec. 2 2011
Abstract :
This paper elaborates on the recently introduced concept of an all-digital RF I/Q modulator. Orthogonal summation and design procedure of the power combining network are explained in more detail. A 65 nm CMOS prototype is implemented based on this concept. The prototype achieves 12.6 dBm peak output power and 20% peak drain efficiency at 2 GHz. While providing 6 dBm output power, the error vector magnitude (EVM) is 3.7%.
Keywords :
CMOS integrated circuits; modulators; power combiners; radiofrequency integrated circuits; CMOS prototype; all-digital RF I/Q modulator; efficiency 20 percent; error vector magnitude; frequency 2 GHz; orthogonal summing; power combining network; size 65 nm; Arrays; Baseband; CMOS integrated circuits; Modulation; Power generation; Radio frequency; Switches;
Conference_Titel :
Radio-Frequency Integration Technology (RFIT), 2011 IEEE International Symposium on
Conference_Location :
Beijing
Print_ISBN :
978-1-4577-0517-5
DOI :
10.1109/RFIT.2011.6141758
