DocumentCode
3189955
Title
Orthogonal summing and power combining network in a 65-nm all-digital RF I/Q modulator
Author
Alavi, Morteza S. ; Staszewski, Robert B. ; De Vreede, Leo C N ; Long, John R.
Author_Institution
ERL/DIMES, Delft Univ. of Technol., Delft, Netherlands
fYear
2011
fDate
Nov. 30 2011-Dec. 2 2011
Firstpage
21
Lastpage
24
Abstract
This paper elaborates on the recently introduced concept of an all-digital RF I/Q modulator. Orthogonal summation and design procedure of the power combining network are explained in more detail. A 65 nm CMOS prototype is implemented based on this concept. The prototype achieves 12.6 dBm peak output power and 20% peak drain efficiency at 2 GHz. While providing 6 dBm output power, the error vector magnitude (EVM) is 3.7%.
Keywords
CMOS integrated circuits; modulators; power combiners; radiofrequency integrated circuits; CMOS prototype; all-digital RF I/Q modulator; efficiency 20 percent; error vector magnitude; frequency 2 GHz; orthogonal summing; power combining network; size 65 nm; Arrays; Baseband; CMOS integrated circuits; Modulation; Power generation; Radio frequency; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio-Frequency Integration Technology (RFIT), 2011 IEEE International Symposium on
Conference_Location
Beijing
Print_ISBN
978-1-4577-0517-5
Type
conf
DOI
10.1109/RFIT.2011.6141758
Filename
6141758
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