Title :
CMOS process compatible ie-Flash (inverse gate electrode Flash) technology for system-on-a-chip
Author :
Shukuri, Shoji ; Tanagisawa, K. ; Ishibashi, Koichiro
Author_Institution :
Semicond. & Integrated Circuits Div., Hitachi Ltd., Tokyo, Japan
Abstract :
A highly reliable single-poly flash technology named ie-Flash (inverse gate electrode Flash), which can be embedded in the common 0.14 μm CMOS process without any process modifications, has been developed. The ie-Flash cell consists of two elementary cells for OR-logical reading, resulting in significant improvement of reliability. 5 V programming with 1 ms duration and 1.2 V-read operation of 35 bit memory modules fabricated by a 0.14 μm CMOS process is demonstrated
Keywords :
CMOS memory circuits; application specific integrated circuits; flash memories; integrated circuit reliability; integrated circuit technology; 0.14 micron; 1.2 V; 5 V; CMOS process compatible flash technology; OR-logical reading; SoC application; highly reliable flash technology; ie-Flash; inverse gate electrode flash technology; single-poly flash technology; system-on-a-chip; CMOS logic circuits; CMOS process; CMOS technology; EPROM; Electrodes; Electrons; Integrated circuit reliability; Integrated circuit technology; Random access memory; Voltage;
Conference_Titel :
Custom Integrated Circuits, 2001, IEEE Conference on.
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-6591-7
DOI :
10.1109/CICC.2001.929750
