DocumentCode
3190018
Title
Design techniques for nanometer wideband power-efficient CMOS ADCs
Author
Seng-Pan U ; Sin, Sai-Weng ; Zhu, Yan ; Chio, U-Fat ; He-Gong Wei ; Martins, R.P.
Author_Institution
State Key Lab. of Analog & Mixed Signal VLSI, Univ. of Macau, Macao, China
fYear
2011
fDate
Nov. 30 2011-Dec. 2 2011
Firstpage
173
Lastpage
176
Abstract
Aggressive CMOS technology scaling has been driving the design of analog-to-digital converters (ADCs) into new era in which many well-established conventional circuit techniques need to be largely modified to cater for the reduced supply headroom as well as the diminishing intrinsic gain of the transistors. However, the design of ADCs can surely benefits from the technology scaling by smart designs, due to the smaller transistors in nanometer CMOS, which is the key factor that the ADC can manipulate the signals with higher signal processing speed as well as reduced significantly the power consumption. This paper will present the design techniques, including the architectural improvements, power reduction and linearity improvement techniques for successful implementation of various examples of high-speed ADCs with high power efficiency in the state-of-the-art nanometer CMOS technology.
Keywords
CMOS integrated circuits; analogue-digital conversion; network synthesis; power electronics; aggressive CMOS technology; analog-to-digital converters; design techniques; nanometer wideband power-efficient CMOS ADC; power consumption; CMOS integrated circuits; CMOS technology; Calibration; Linearity; Power demand; Transistors; Wideband; Analog-to-Digital Converters; Nanometer CMOS; Successive Approximation;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio-Frequency Integration Technology (RFIT), 2011 IEEE International Symposium on
Conference_Location
Beijing
Print_ISBN
978-1-4577-0517-5
Type
conf
DOI
10.1109/RFIT.2011.6141760
Filename
6141760
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