Finite element analysis of skin effect in copper interconnects at 77 K and 300 K

Author

Ghoshal, U. ; Smith, L.N.

Author_Institution

Microelectron. & Comput. Tech. Corp., Austin, TX, USA

fYear

1988

fDate

25-27 May 1988

Firstpage

773

Abstract

A methodology is presented for calculating normal skin effect in complex geometries using the finite-element method. The results are used to analyze the performance of copper interconnects at 77 K and 300 K for both digital and microwave applications. The analysis includes attenuation per unit length, phase velocity and characteristic impedance as a function of frequency from DC to 10 GHz. It was found that for digital signal propagation, skin effects are important for predicting rise-time degradation for rise-time less than 1.2 times the flight delay, while for larger rise-times, the DC resistance corresponding to the cross-section of the signal line is adequate for explaining the lossy characteristics.<>

Keywords

VLSI; copper; digital integrated circuits; finite element analysis; metallisation; microwave integrated circuits; skin effect; 0 to 10 GHz; 300 K; 77 K; Cu interconnect; DC resistance; VLSI metallisation; analysis of skin effect; attenuation per unit length; characteristic impedance; complex geometries; digital signal propagation; finite-element method; function of frequency; phase velocity; predicting rise-time degradation; Attenuation; Copper; Degradation; Finite element methods; Frequency; Geometry; Impedance; Microwave propagation; Performance analysis; Skin effect;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1988., IEEE MTT-S International

Conference_Location

New York, NY, USA

Type

conf

DOI

10.1109/MWSYM.1988.22146

Filename

22146