Title :
A novel algorithm for bias-dependent cascode FET modeling
Author :
Winson, P.B. ; Dunleavy, Lawrence P. ; Gordon, H.C. ; Calvo, M.V. ; Sherman, J.
Author_Institution :
Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
Abstract :
In this paper we present a novel algorithm for a flexible table-based, bias-dependent, small-signal cascode MESFET model. The model utilizes 2-port DC and RF characterizations of a single-gate, common-source MESFET in contrast to the typical 3-port characterization approach typically applied to dual-gate and cascode FETs. Cascode FET simulations enabled by the new model are shown to track measured data over varying bias conditions.<>
Keywords :
Schottky gate field effect transistors; equivalent circuits; semiconductor device models; 2-port DC characterization; 2-port RF characterization; bias-dependent model; cascode FET modeling; single-gate common-source MESFET; small-signal model; table-based model; varying bias conditions; MESFETs; Microwave FETs; Microwave amplifiers; Microwave devices; Parameter extraction; Performance gain; Positron emission tomography; Predictive models; Radio frequency; Scattering parameters;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.405928
