DocumentCode :
3190149
Title :
Proximity IOs using inductive coupling
Author :
Kuroda, Tadahiro
Author_Institution :
Keio Univ., Yokohama, Japan
fYear :
2011
fDate :
Nov. 30 2011-Dec. 2 2011
Firstpage :
37
Lastpage :
40
Abstract :
This paper presents an proximity IOs using inductive coupling, namely ThruChip Interface (TCI). TCI employs near field inductive coupling that is suitable for high-density parallel channel arrangement with small cross talk. It is less expensive than TSV by over 20⊄chip, since it is implemented by digital circuits in a standard CMOS. It bears comparison with TSV in terms of data rate (10Gb/s/ch), reliability (BER<;10-14), and energy dissipation (0.1pJ/b). ESD protection devices can be eliminated to lower delay, power, and area. It provides with an AC coupling link to make interface design easy under multiple/variable VDD´s. The cost/performance will further be improved exponentially by thinning chip thickness. This paper will cover basics, applications, and future perspectives of the TCI.
Keywords :
CMOS digital integrated circuits; coupled circuits; electromagnetic induction; integrated circuit design; integrated circuit interconnections; integrated circuit reliability; three-dimensional integrated circuits; AC coupling link; CMOS digital circuits; TCI; TSV; ThruChip interface; bit rate 10 Gbit/s; circuit reliability; energy dissipation; high-density parallel channel arrangement; multiple VDD; near field inductive coupling; proximity IO; proximity communication; through silicon via technology; variable VDD; CMOS integrated circuits; Coils; Couplings; Random access memory; Stacking; Through-silicon vias; Wires; 3D integration; Proximity communication; SiP; inductive coupling; near field;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio-Frequency Integration Technology (RFIT), 2011 IEEE International Symposium on
Conference_Location :
Beijing
Print_ISBN :
978-1-4577-0517-5
Type :
conf
DOI :
10.1109/RFIT.2011.6141767
Filename :
6141767
Link To Document :
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