Comparison of Bulk-Oxide Trap Models: Lumped Versus Distributed Circuit

Author

Han-Ping Chen ; Jaesoo Ahn ; McIntyre, Paul C. ; Taur, Yuan

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA, USA

Volume

60

Issue

11

fYear

2013

fDate

Nov. 2013

Firstpage

3920

Lastpage

3924

Abstract

Lumped- and distributed-circuit models for bulk-oxide traps are compared in terms of their fitting of p and n-type InGaAs MOS dispersion data. It is shown that the lumped-circuit model produces a distinct curvature in the capacitance versus log (frequency) plot-inconsistent with MOS data. Distributed-circuit model is able to fit both capacitance and conductance dispersions with a single, uniform oxide trap density, but the lumped-circuit model cannot. It is also shown that Hasegawa and Sawada´s lumped-circuit model with an exponentially decaying distribution of border traps deviates even farther from the dispersion data.

Keywords

III-V semiconductors; MOS capacitors; capacitance; distributed parameter networks; electric admittance; gallium arsenide; indium compounds; lumped parameter networks; semiconductor device models; Al₂O₃-In_0.53Ga_0.47As; bulk-oxide trap models; capacitance versus log plot; capacitance-voltage data; conductance-voltage data; distributed-circuit models; lumped-circuit models; n-type InGaAs MOS dispersion data; oxide trap density; p-type InGaAs MOS dispersion data; Aluminum oxide; Computational modeling; Data models; Dispersion; Distributed databases; Electron traps; Integrated circuit modeling; Border trap; MOS; bulk-oxide trap; tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2281298

Filename

6615969