Title :
Sub 100 nm In0.53Ga0.47As/In0.52Al0.48As InP-based HEMT with fT=204 GHz, fmax=352 GHz, and gm, max=918 mS/mm
Author :
Yinghui, Zhong ; Xiantai, Wang ; Yongbo, Su ; Yuxiong, Cao ; Zhi, Jin ; Yuming, Zhang ; Xinyu, Liu
Author_Institution :
Inst. of Microelectron., Beijing, China
fDate :
Nov. 30 2011-Dec. 2 2011
Abstract :
88 nm-gate InP-based InAlAs/InGaAs HEMTs with the gate width of 75 μm have been designed and fabricated. They exhibited a current gain cutoff frequency (fT) of 204 GHz and a maximum oscillation frequency (fmax) of 352 GHz at a drain-source voltage (Vds) of 1.5 V and a gate-source voltage (Vgs) of 0 V. Excellent DC characteristics were also demonstrated with the DC peak transconductance (gm, max) of 918 mS/mm and the maximum current density of 635 mA/mm.
Keywords :
III-V semiconductors; current density; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave transistors; InGaAs-InAlAs; InP; current density; current gain cutoff frequency; frequency 204 GHz; frequency 352 GHz; high electron mobility transistors; maximum oscillation frequency; millimetre wave transistors; side-recess spacing; size 75 mum; size 88 nm; voltage 1.5 V; Cutoff frequency; Gain; HEMTs; Indium compounds; Indium phosphide; Logic gates; Radio frequency; Cutoff frequency (fT); HEMT; InP; maximum oscillation frequency (fmax); side-recess spacing (Lside);
Conference_Titel :
Radio-Frequency Integration Technology (RFIT), 2011 IEEE International Symposium on
Conference_Location :
Beijing
Print_ISBN :
978-1-4577-0517-5
DOI :
10.1109/RFIT.2011.6141772
