A table based bias and temperature dependent small signal and noise equivalent circuit model

Author

Winson, P.B. ; Lardizabal, S.M. ; Dunleavy, Larry

Author_Institution

Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA

fYear

1995

fDate

16-20 May 1995

Firstpage

623

Abstract

A new algorithm is presented for construction of an accurate table-based bias and temperature dependent FET small-signal and noise model. The algorithm provides orders of magnitude data reduction over the alternate approach of storing multiple S-parameter and noise parameter data files (to represent different bias and temperature conditions). The algorithm performs 2-D linear interpolation on a single stored data table to quickly produce accurate bias and temperature dependent model simulations.<>

Keywords

S-parameters; data reduction; equivalent circuits; field effect transistors; interpolation; semiconductor device models; semiconductor device noise; 2D linear interpolation; FET model; HEMT; MESFET; bias dependent model; data reduction; multiple S-parameter data files; noise equivalent circuit model; noise parameter data files; single stored data table; small signal equivalent circuit model; table based model; temperature dependent model; Circuit noise; Circuit optimization; Circuit simulation; Equivalent circuits; Interpolation; Nonlinear equations; Positron emission tomography; Scattering parameters; Temperature dependence; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.405929

Filename

405929