Title :
Circuits and technologies for highly integrated optical networking ICs at 10 Gb/s to 40 Gb/s
Author :
Voinigescu, S. ; Popescu, P. ; Banens, P. ; Copeland, M. ; Fortier, G. ; Howlett, K. ; Herod, M. ; Marchesan, D. ; Showell, J. ; Sziiagyi, S. ; Tran, H. ; Weng, J.
Author_Institution :
Quake Technol. Inc., Ottawa, Ont., Canada
Abstract :
This paper presents a comparative overview of the performance of Si CMOS, SiGe BiCMOS and III-V HBT and FET technologies for 10-40 Gb/s fiber-optic applications. Active and passive device performance requirements, as well as on-chip isolation issues are first addressed. Fundamental building blocks are overviewed and the pros and cons of each technology implementation are discussed. Finally, a sub 2.5 W, highly integrated 10 Gb/s SiGe BiCMOS implementation of a 10 Gb/s to 622 Mb/s transceiver is described in detail. The transceiver achieves the highest level of integration, providing EOI (electro-optical-interface) and SerDes (Serializer-Deserializer) functions
Keywords :
optical communication equipment; optical fibre networks; transceivers; 10 to 40 Gbit/s; BiCMOS; CMOS; FET technologies; HBT technologies; SerDes; Si; SiGe; electro-optical-interface; fiber-optic applications; on-chip isolation issues; optical networking ICs; serializer-deserializer functions; transceiver; BiCMOS integrated circuits; CMOS technology; Germanium silicon alloys; III-V semiconductor materials; Integrated circuit technology; Integrated optics; Isolation technology; Optical fiber networks; Silicon germanium; Transceivers;
Conference_Titel :
Custom Integrated Circuits, 2001, IEEE Conference on.
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-6591-7
DOI :
10.1109/CICC.2001.929795
