Title :
When do we need non-quasistatic CMOS RF-models?
Author :
Gondro, Elmar ; Kowarik, Oskar ; Knoblinger, Gerhard ; Klein, Peter
Author_Institution :
Inst. of Electron, Bundeswehr Univ., Neubiberg, Germany
Abstract :
This paper presents criteria for the onset of NQS effects derived from time transient device simulations and S-parameter measurements. For the first time it has been proved that e.g, a 10 μm NMOS transistor can be described up to 27 MHz and a 0.2 μm device up to 46 GHz by the quasistatic approach while the accuracy of the description of the inversion layer charge is still 99%
Keywords :
CMOS integrated circuits; UHF field effect transistors; UHF integrated circuits; integrated circuit modelling; inversion layers; semiconductor device models; 0.2 to 10 micron; 27 MHz; 46 GHz; NMOS transistor; NQS effects; S-parameter measurements; inversion layer charge description; nonquasistatic CMOS RF-models; quasistatic approach; time transient device simulations; CMOS technology; Charge carriers; Circuit simulation; Estimation theory; Flowcharts; MOSFET circuits; Medical simulation; Radio frequency; Time measurement; Voltage;
Conference_Titel :
Custom Integrated Circuits, 2001, IEEE Conference on.
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-6591-7
DOI :
10.1109/CICC.2001.929804
