Title :
Comparative low frequency noise analysis of bipolar and MOS transistors using an advanced complementary BiCMOS technology
Author :
Babcock, Jeffrey A. ; Loftin, Bill ; Madhani, Praful ; Chen, Xinfen ; Pinto, Angelo ; Schroder, Dieter K.
Author_Institution :
Mixed-Signal Products Process Dev. Group, Texas Instrum. Deutschland, Freising, Germany
Abstract :
In this paper, for the first time we compare 1/f noise in both complementary bipolar and complementary MOSFET transistors fabricated on thick film bonded SOI with full dielectric isolation capability. For MOS devices, a new relationship for 1/f noise is given which allows intuitive insight when comparing technologies. Both bipolar and MOS transistors show agreement to a number fluctuation model for noise mechanisms. A factor of 2 lower 1/f noise is determined for the PNP in comparison to NPN transistors. For this technology generation, bipolar transistors indicate an order of magnitude lower noise level when compared to MOSFETs under similar drive currents and effective area conditions. Finally, we discuss generation recombination noise, which can be observed in some of the devices
Keywords :
1/f noise; BiCMOS integrated circuits; MOSFET; bipolar transistors; integrated circuit noise; isolation technology; semiconductor device noise; silicon-on-insulator; 1/f noise; LF noise analysis; MOSFETs; NPN transistors; PNP transistors; Si; advanced complementary BiCMOS technology; complementary MOSFET transistors; complementary bipolar transistors; dielectric isolation capability; generation-recombination noise; low frequency noise analysis; noise mechanisms; number fluctuation model; thick film bonded SOI; Bipolar transistors; Bonding; Dielectrics; Fluctuations; Isolation technology; Low-frequency noise; MOS devices; MOSFET circuits; Noise level; Thick films;
Conference_Titel :
Custom Integrated Circuits, 2001, IEEE Conference on.
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-6591-7
DOI :
10.1109/CICC.2001.929806
