DocumentCode
3190568
Title
High-frequency large-signal physical modeling of microwave semiconductor devices
Author
Alsunaidi, M.A. ; El-Ghazaly, Samir M.
Author_Institution
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
fYear
1995
fDate
16-20 May 1995
Firstpage
619
Abstract
High frequency characterization of microwave semiconductor devices is presented based on physical modeling. The active device is simulated using a fast and accurate model based on the hydrodynamic equations which simulate the behavior of short gate field-effect transistors (FETs). The device response is analyzed as a function of the input signal frequency and its amplitude.<>
Keywords
frequency response; microwave field effect transistors; semiconductor device models; active device; device response; field-effect transistors; high frequency characterization; high-frequency modeling; hydrodynamic equations; large-signal physical modeling; microwave semiconductor devices; short gate FETs; Electromagnetic heating; Electrons; Equivalent circuits; FETs; Frequency; Microwave devices; Nonlinear equations; Partial differential equations; Poisson equations; Semiconductor devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location
Orlando, FL, USA
ISSN
0149-645X
Print_ISBN
0-7803-2581-8
Type
conf
DOI
10.1109/MWSYM.1995.405930
Filename
405930
Link To Document