Title :
A new analytical model for high frequency MOSFET noise
Author :
Guerrieri, S. Donati ; Bonani, F. ; Ghione, G. ; Alam, M.A.
Author_Institution :
Dipartimento di Elettronica, Politecnico di Torino, Italy
Abstract :
A new analytical approach to extract high frequency MOSFET noise is presented and its validation is carried out with careful comparison with numerical physics-based 2D noise simulations. The analytical formulation accounts for drain and gate noise spectra and their correlation, and extends the classical van der Ziel approach to short channel devices. The field dependency of the diffusivity is shown to affect the noise performances significantly in short-gate devices. The new model is well suited to be exploited in circuit simulation in conjunction with compact models such as BSIMA
Keywords :
MOSFET; UHF field effect transistors; semiconductor device models; semiconductor device noise; HF MOSFET noise; analytical model; circuit simulation; diffusivity; drain noise spectra; field dependency; gate noise spectra; high frequency noise; noise performances; numerical physics-based 2D noise simulations; short channel devices; short-gate devices; van der Ziel approach; Analytical models; CMOS technology; Circuit noise; Circuit simulation; Fluctuations; Frequency; MOSFET circuits; Microscopy; Noise measurement; Semiconductor device modeling;
Conference_Titel :
Custom Integrated Circuits, 2001, IEEE Conference on.
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-6591-7
DOI :
10.1109/CICC.2001.929807
