A new analytical model for high frequency MOSFET noise

Author

Guerrieri, S. Donati ; Bonani, F. ; Ghione, G. ; Alam, M.A.

Author_Institution

Dipartimento di Elettronica, Politecnico di Torino, Italy

fYear

2001

fDate

2001

Firstpage

389

Lastpage

392

Abstract

A new analytical approach to extract high frequency MOSFET noise is presented and its validation is carried out with careful comparison with numerical physics-based 2D noise simulations. The analytical formulation accounts for drain and gate noise spectra and their correlation, and extends the classical van der Ziel approach to short channel devices. The field dependency of the diffusivity is shown to affect the noise performances significantly in short-gate devices. The new model is well suited to be exploited in circuit simulation in conjunction with compact models such as BSIMA

Keywords

MOSFET; UHF field effect transistors; semiconductor device models; semiconductor device noise; HF MOSFET noise; analytical model; circuit simulation; diffusivity; drain noise spectra; field dependency; gate noise spectra; high frequency noise; noise performances; numerical physics-based 2D noise simulations; short channel devices; short-gate devices; van der Ziel approach; Analytical models; CMOS technology; Circuit noise; Circuit simulation; Fluctuations; Frequency; MOSFET circuits; Microscopy; Noise measurement; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits, 2001, IEEE Conference on.

Conference_Location

San Diego, CA

Print_ISBN

0-7803-6591-7

Type

conf

DOI

10.1109/CICC.2001.929807

Filename

929807