Title :
Diffusion of In and Ga in selenized Cu-In and Cu-Ga precursors
Author :
Marudachalam, M. ; Hichri, H. ; Birkmire, R.W. ; Schultz, J.M. ; Swartzlander, A.B. ; Al-Jassim, M.M.
Author_Institution :
Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA
Abstract :
The interdiffusion of Ga and In in a CuGaSe2/CuInSe2 thin film diffusion couple and the diffusion of In into CuGaSe2 thin films were studied by Auger depth profiling. CuGaSe2 and CuInSe2 were obtained via selenization by H2Se of sequentially deposited Cu-Ga and Cu-In layers, respectively. The CuGaSe2/CuInSe2 diffusion couple was annealed at 650°C for 30 minutes in an argon atmosphere. The thin film source of In was diffused into CuGaSe2 in the temperature range of 400°C to 600°C for 30 minutes in an argon atmosphere. Bulk interdiffusion coefficients of In and Ga in the CuGaSe2/GuInSe2 couple annealed at 650°C, and the diffusion coefficients of In in CuGaSe2 films diffusion annealed at various temperatures were determined. The interdiffusion coefficients of In and Ga at 650°C in the diffusion couple are similar (DIn=1.5×10-11 cm2 /sec and DGa=4.0×10-11 cm2/sec). The diffusion coefficients of In in CuGaSe2 thin films varied from 2.0×10-13 cm2/sec to 4.5×10-12 cm2/sec in the temperature range of 400°C to 600°C
Keywords :
Auger effect; annealing; chemical interdiffusion; copper compounds; gallium compounds; indium compounds; semiconductor thin films; ternary semiconductors; 30 min; 400 to 600 C; 650 C; Auger depth profiling; Cu(InGa)Se2; CuGaSe2; CuGaSe2 thin film diffusion; CuGaSe2/CuInSe2 diffusion couple; CuInSe2; CuInSe2 thin film diffusion; Ga; Ga interdiffusion; H2Se; In; In interdiffusion; annealing; argon atmosphere; diffusion coefficients; interdiffusion coefficients; selenized Cu-Ga precursor; selenized Cu-In precursor; Annealing; Argon; Atmosphere; Computational Intelligence Society; Copper; Energy conversion; Sputtering; Temperature distribution; Transistors; X-ray scattering;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.564250