Experimental study on MOSFET´s flicker noise under switching conditions and modelling in RF applications

Author

Zhang, Zhaofeng ; Lau, Jack

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

fYear

2001

fDate

2001

Firstpage

393

Lastpage

396

Abstract

The flicker noise mechanism under switching conditions is studied. Experimental results show that the baseband flicker noise is a superposition of upconverted gate flicker noise at each harmonic of the output current. Methods to reduce the flicker noise are discussed. Based on the measured results, the large signal flicker noise model for RF applications under switching conditions is proposed and validated by simulations and measurements. With the proposed model, the noise performance of a single-balanced Gilbert mixer for direct conversion applications is analysed and discussed

Keywords

MOSFET; field effect transistor switches; flicker noise; mixers (circuits); semiconductor device measurement; semiconductor device models; semiconductor device noise; MOSFET flicker noise; RF applications; baseband flicker noise; direct conversion applications; flicker noise mechanism; flicker noise reduction methods; large signal flicker noise model; modelling; single-balanced Gilbert mixer; switching conditions; upconverted gate flicker noise; 1f noise; Baseband; CMOS technology; Circuit noise; Integrated circuit noise; MOSFET circuits; Noise measurement; Phase noise; Radio frequency; Working environment noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits, 2001, IEEE Conference on.

Conference_Location

San Diego, CA

Print_ISBN

0-7803-6591-7

Type

conf

DOI

10.1109/CICC.2001.929808

Filename

929808