Title :
A monolithic AlGaN/GaN HEMT VCO using BST film varactor
Author :
Kong, Cen ; Li, Hui ; Jiang, Shuwen ; Zhou, Jianjun ; Chen, Xiaojian ; Chen, Chen
Author_Institution :
Sci. & Technol. on Monolithic Integrated Circuits & Modules Lab., Nanjing Electron. Device Inst., Nanjing, China
fDate :
Nov. 30 2011-Dec. 2 2011
Abstract :
A monolithic AlGaN/GaN HEMT voltage controlled oscillator (VCO) using barium strontium titanate (BST) MIM varactor is reported first time. The BST thin film was fabricated by RF magnetron sputtering. The fabrication process is fully compatible with the standard GaN MMIC integrated process. An output power of 17dBm and the phase noise of -75dBc/Hz (at 100kHz) and -110dBc/Hz (at 1MHz) are obtained while the bias of the drain is 8V and BST varactor voltage is 0V. The VCO exhibits 500MHz tunable frequency bandwidth at the central frequency of 6.42GHz while BST varactor voltage changed from 0V to 20V.
Keywords :
HEMT integrated circuits; III-V semiconductors; MIM devices; MMIC oscillators; UHF oscillators; UHF transistors; aluminium compounds; barium compounds; gallium compounds; high electron mobility transistors; microwave transistors; phase noise; sputtering; strontium compounds; thin film capacitors; varactors; voltage-controlled oscillators; wide band gap semiconductors; AlGaN-GaN; BST; GaN; MMIC integrated process; RF magnetron sputtering; bandwidth 500 MHz; frequency 1 MHz; frequency 100 kHz; frequency 6.42 GHz; monolithic HEMT VCO; thin-film MIM varactor; tunable frequency bandwidth; voltage 0 V to 20 V; voltage controlled oscillator; Gallium nitride; HEMTs; MMICs; Microwave oscillators; Phase noise; Varactors; Voltage-controlled oscillators; AlGaN/GaN HEMT; BST Varactor; MMIC Process; Monolithic VCO;
Conference_Titel :
Radio-Frequency Integration Technology (RFIT), 2011 IEEE International Symposium on
Conference_Location :
Beijing
Print_ISBN :
978-1-4577-0517-5
DOI :
10.1109/RFIT.2011.6141794
