Title :
Reliable ICs fabricated using a production GaAs HBT process for military and commercial applications
Author :
Yamada, F.M. ; Oki, A.K. ; Streit, D.C. ; Umemoto, D.R. ; Tran, L.T. ; Kobayashi, K.W. ; Grossman, P.C. ; Block, T.K. ; Lammert, M.D. ; Olson, S.K. ; Cowles, J.C. ; Hoppe, M.M. ; Bui, S.B. ; Smith, D.M. ; Najita, K. ; Hennecke, H.J. ; Rezek, E.A.
Author_Institution :
Div. of Electron. Syst. & Technol., TRW Inc., Redondo Beach, CA, USA
Abstract :
Reliability performance of a complex analog integrated circuit (IC) fabricated using a production GaAs-AlGaAs heterojunction bipolar transistor (HBT) process technology is reported. Three temperature constant stress lifetest projects a median-time-to-failure of 5200 years for a monolithic five-stage logarithmic amplifier operating at a 125°C junction temperature. This technology is currently delivering both space-qualified Class “K” ICs to major government programs and high-volume, low-cost ICs for commercial applications. In addition to reliability performance, the advantages of HBTs for analog/microwave and digital functions in communication systems are highlighted
Keywords :
III-V semiconductors; MMIC amplifiers; bipolar MMIC; bipolar analogue integrated circuits; gallium arsenide; integrated circuit manufacture; integrated circuit reliability; integrated circuit technology; integrated circuit testing; life testing; microwave bipolar transistors; military equipment; telecommunication equipment; 125 degC; 5200 year; GaAs-AlGaAs; HBT; HBT process; analog IC; analog integrated circuit; analog/microwave functions; commercial applications; communication systems; digital functions; government programs; heterojunction bipolar transistor; junction temperature; low-cost IC; median time to failure; military applications; monolithic five-stage logarithmic amplifier; production process technology; reliability performance; space-qualified Class K IC; temperature constant stress lifetest; Analog integrated circuits; Bipolar integrated circuits; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit reliability; Integrated circuit technology; Production; Space technology; Stress; Temperature;
Conference_Titel :
Military Communications Conference, 1995. MILCOM '95, Conference Record, IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-2489-7
DOI :
10.1109/MILCOM.1995.483566
