Reliable ICs fabricated using a production GaAs HBT process for military and commercial applications

Author

Yamada, F.M. ; Oki, A.K. ; Streit, D.C. ; Umemoto, D.R. ; Tran, L.T. ; Kobayashi, K.W. ; Grossman, P.C. ; Block, T.K. ; Lammert, M.D. ; Olson, S.K. ; Cowles, J.C. ; Hoppe, M.M. ; Bui, S.B. ; Smith, D.M. ; Najita, K. ; Hennecke, H.J. ; Rezek, E.A.

Author_Institution

Div. of Electron. Syst. & Technol., TRW Inc., Redondo Beach, CA, USA

Volume

2

fYear

1995

fDate

35010

Firstpage

760

Abstract

Reliability performance of a complex analog integrated circuit (IC) fabricated using a production GaAs-AlGaAs heterojunction bipolar transistor (HBT) process technology is reported. Three temperature constant stress lifetest projects a median-time-to-failure of 5200 years for a monolithic five-stage logarithmic amplifier operating at a 125°C junction temperature. This technology is currently delivering both space-qualified Class “K” ICs to major government programs and high-volume, low-cost ICs for commercial applications. In addition to reliability performance, the advantages of HBTs for analog/microwave and digital functions in communication systems are highlighted

Keywords

III-V semiconductors; MMIC amplifiers; bipolar MMIC; bipolar analogue integrated circuits; gallium arsenide; integrated circuit manufacture; integrated circuit reliability; integrated circuit technology; integrated circuit testing; life testing; microwave bipolar transistors; military equipment; telecommunication equipment; 125 degC; 5200 year; GaAs-AlGaAs; HBT; HBT process; analog IC; analog integrated circuit; analog/microwave functions; commercial applications; communication systems; digital functions; government programs; heterojunction bipolar transistor; junction temperature; low-cost IC; median time to failure; military applications; monolithic five-stage logarithmic amplifier; production process technology; reliability performance; space-qualified Class K IC; temperature constant stress lifetest; Analog integrated circuits; Bipolar integrated circuits; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit reliability; Integrated circuit technology; Production; Space technology; Stress; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Military Communications Conference, 1995. MILCOM '95, Conference Record, IEEE

Conference_Location

San Diego, CA

Print_ISBN

0-7803-2489-7

Type

conf

DOI

10.1109/MILCOM.1995.483566

Filename

483566