Title :
Femtosecond history of free carriers in the conduction band of a wide-bandgap oxide
Author :
Petite, Guillaume ; Daguzan, P. ; Guizard, Stéphane ; Martin, Philippe
Author_Institution :
CEA, Centre d´´Etudes Nucleaires de Saclay, Gif-sur-Yvette, France
Abstract :
We present a number of methods using ultra-short laser pulses to investigate the short time behaviour of an electron gas injected in the conduction band of a wide-bandgap oxide. Electron relaxation and trapping can be observed in this way, as well as time-resolved defect creation. The achievable time resolution is at present about 10-13 s. Strong differences between apparently similar oxides are observed, which correlate with their ability to endure other types of ionising radiation. A detailed study of point defect creation in α-SiO2 is presented
Keywords :
carrier relaxation time; conduction bands; defect absorption spectra; dielectric thin films; electron gas; electron traps; point defects; radiation effects; silicon compounds; time resolved spectra; SiO2; achievable time resolution; conduction band; electron gas; electron relaxation; electron trapping; free carriers; ionising radiation; point defect creation; time-resolved defect creation; ultra-short laser pulses; wide-bandgap oxide; Electron traps; Erbium; History; Insulation; Photonic band gap;
Conference_Titel :
Electrical Insulation and Dielectric Phenomena, 1995. Annual Report., Conference on
Conference_Location :
Virginia Beach, VA
Print_ISBN :
0-7803-2931-7
DOI :
10.1109/CEIDP.1995.483571
