Title :
Thermal pulse investigation of the generation, transport, and trapping of space charge in microelectronics buried oxide structures
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
A first laser-induced thermal pulse study of electroded SIMOX structures is reported with the goal of characterizing the space-charge buildup in the 400 nm thick, insulating SiO2 layer, separating a 150 nm thick device layer from the integral 500 μm thick Si substrate. The results reveal unexpectedly complex thermal pulse response atypical of a simple dielectric
Keywords :
SIMOX; buried layers; hole traps; laser beam effects; photothermal effects; space charge; space-charge-limited conduction; 150 nm; 400 nm; 500 micron; SiO2-Si; device layer; electroded SIMOX structures; laser-induced thermal pulse; microelectronics buried oxide structures; space charge; space-charge buildup; thermal pulse investigation; Dielectric substrates; Dielectrics and electrical insulation; Optical pulse generation; Optical pulses; Pulse generation;
Conference_Titel :
Electrical Insulation and Dielectric Phenomena, 1995. Annual Report., Conference on
Conference_Location :
Virginia Beach, VA
Print_ISBN :
0-7803-2931-7
DOI :
10.1109/CEIDP.1995.483572
