• DocumentCode
    3190897
  • Title

    An empirical study of performance and power scaling of low voltage DDR3

  • Author

    Ji, Steven Yun ; Loop, Becky ; James, Patrick D. ; Paranjape, Vivek

  • Author_Institution
    Intel Corp., Santa Clara, CA, USA
  • fYear
    2010
  • fDate
    25-27 Oct. 2010
  • Firstpage
    9
  • Lastpage
    12
  • Abstract
    Memory power consumption has become a main driving force of new memory technologies. Low voltage DDR3 (DDR3L) has emerged to provide optimal solution for performance and power for certain market segments. With empirical data, this paper demonstrates the scaling of DDR3L signal integrity performance and power consumption at full system level. The signal integrity performance is degraded by 10~20% in terms of voltage and timing margin with strong DRAM vendor sensitivity. The DRAM power consumption is reduced by ~20%. The impact to mobile notebook average and self-refresh power is also examined.
  • Keywords
    DRAM chips; low-power electronics; performance evaluation; power aware computing; DDR3L signal integrity performance; DRAM power consumption; DRAM vendor sensitivity; low voltage DDR3; memory power consumption; memory technology; mobile notebook average; power scaling; self-refresh power; Batteries; Power demand; SDRAM; Silicon; Timing; Voltage measurement; DDR3; DDR3L; average power; performance scaling; self-refresh power; signal integrity; thermal design power;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Performance of Electronic Packaging and Systems (EPEPS), 2010 IEEE 19th Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    978-1-4244-6865-2
  • Electronic_ISBN
    978-1-4244-6866-9
  • Type

    conf

  • DOI
    10.1109/EPEPS.2010.5642531
  • Filename
    5642531