DocumentCode
3190897
Title
An empirical study of performance and power scaling of low voltage DDR3
Author
Ji, Steven Yun ; Loop, Becky ; James, Patrick D. ; Paranjape, Vivek
Author_Institution
Intel Corp., Santa Clara, CA, USA
fYear
2010
fDate
25-27 Oct. 2010
Firstpage
9
Lastpage
12
Abstract
Memory power consumption has become a main driving force of new memory technologies. Low voltage DDR3 (DDR3L) has emerged to provide optimal solution for performance and power for certain market segments. With empirical data, this paper demonstrates the scaling of DDR3L signal integrity performance and power consumption at full system level. The signal integrity performance is degraded by 10~20% in terms of voltage and timing margin with strong DRAM vendor sensitivity. The DRAM power consumption is reduced by ~20%. The impact to mobile notebook average and self-refresh power is also examined.
Keywords
DRAM chips; low-power electronics; performance evaluation; power aware computing; DDR3L signal integrity performance; DRAM power consumption; DRAM vendor sensitivity; low voltage DDR3; memory power consumption; memory technology; mobile notebook average; power scaling; self-refresh power; Batteries; Power demand; SDRAM; Silicon; Timing; Voltage measurement; DDR3; DDR3L; average power; performance scaling; self-refresh power; signal integrity; thermal design power;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Performance of Electronic Packaging and Systems (EPEPS), 2010 IEEE 19th Conference on
Conference_Location
Austin, TX
Print_ISBN
978-1-4244-6865-2
Electronic_ISBN
978-1-4244-6866-9
Type
conf
DOI
10.1109/EPEPS.2010.5642531
Filename
5642531
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