A Latchup-Immune and Robust SCR Device for ESD Protection in 0.25-μm 5-V CMOS Process

Author

Yu-Ching Huang ; Ming-Dou Ker

Author_Institution

Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

34

Issue

5

fYear

2013

fDate

May-13

Firstpage

674

Lastpage

676

Abstract

Based on good electrostatic discharge (ESD) robustness, silicon-controlled rectifier (SCR) device is used for on-chip ESD protection. The major concern of SCR is the latch-up issue, because of its low holding voltage. Previous papers tried to design latchup-immune SCR devices; however, those devices would cause lower ESD robustness. In this letter, a new latchup-immune and robust SCR device for ESD protection is proposed and verified in a 0.25-μm 5-V CMOS process. Through inserting one additional parasitic bipolar junction transistor into SCR device structure, this new proposed SCR can increase the holding voltage without causing degradation on its ESD robustness.

Keywords

CMOS integrated circuits; bipolar transistors; electrostatic discharge; elemental semiconductors; flip-flops; rectifiers; silicon; CMOS process; ESD robustness; SCR device structure; Si; electrostatic discharge; holding voltage; latchup-immune SCR device; on-chip ESD protection; parasitic bipolar junction transistor; robust SCR device; silicon-controlled rectifier device; size 0.25 mum; voltage 5 V; Electrostatic discharges (ESD); latchup; silicon-controlled rectifier (SCR);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2252456

Filename

6491440