DocumentCode :
3191029
Title :
A comparison of CMOS and SiGe LNA´s and mixers for wireless LAN application
Author :
Li, Xi ; Brogan, Tom ; Esposito, Mark ; Myers, Brent ; O, Kenneth K.
Author_Institution :
Intersil Corp., Palm Bay, FL, USA
fYear :
2001
fDate :
2001
Firstpage :
531
Lastpage :
534
Abstract :
2.4-GHz CMOS LNA and mixer for a high performance wireless LAN chipset fabricated in a 0.25-μm foundry digital CMOS process were compared to the SiGe bipolar circuits using the same topology and almost identical schematic. The CMOS circuits were housed in the same package with the same pinout, and tested on the same PC board under similar bias conditions as those for the SiGe bipolar circuits. The CMOS LNA and mixer can match the SiGe performance with a 15 to 20% increase in power consumption, and a direct migration from bipolar to CMOS can be realized without major changes in circuits and systems
Keywords :
CMOS analogue integrated circuits; Ge-Si alloys; UHF amplifiers; UHF integrated circuits; UHF mixers; bipolar analogue integrated circuits; integrated circuit noise; semiconductor materials; wireless LAN; 0.25 micron; 2.4 GHz; CMOS LNA; CMOS mixers; RF ICs; SiGe; SiGe LNA; SiGe bipolar circuits; SiGe mixers; WLAN chipset; bias conditions; power consumption; wireless LAN application; CMOS digital integrated circuits; CMOS process; Circuit testing; Circuit topology; Energy consumption; Foundries; Germanium silicon alloys; Packaging; Silicon germanium; Wireless LAN;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Custom Integrated Circuits, 2001, IEEE Conference on.
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-6591-7
Type :
conf
DOI :
10.1109/CICC.2001.929836
Filename :
929836
Link To Document :
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