Title :
Distributed amplifier using enhancement-mode AlGaN/GaN HEMTs
Author :
Cheng, Zhiqun ; Zhou, Xiaopeng ; Chen, Kevin J.
Author_Institution :
Key Lab. of RF Circuit & Syst., Hangzhou Dianzi Univ., Hangzhou
Abstract :
Distributed amplifiers (DAs) using 1mm-gate enhancement-mode AlGaN/GaN HEMT were designed and fabricated. Design process and simulation results of the DA are given. Simulation results show the input and output VSWR (voltage standing wave ratio) of less than 2, associated gain of more than 8.5dB and gain ripple of less than 1dB at frequency from 2GHz to 6GHz.
Keywords :
HEMT circuits; UHF amplifiers; aluminium compounds; distributed amplifiers; gallium compounds; microwave amplifiers; wide band gap semiconductors; AlGaN-GaN; UHF amplifiers; distributed amplifiers; enhancement-mode; frequency 2 GHz to 6 GHz; high electron mobility transistors; microwave amplifiers; Aluminum gallium nitride; Distributed amplifiers; Fabrication; Gallium nitride; HEMTs; MODFETs; Plasma applications; Plasma sources; Plasma temperature; Power transmission lines;
Conference_Titel :
Communications, Circuits and Systems, 2008. ICCCAS 2008. International Conference on
Conference_Location :
Fujian
Print_ISBN :
978-1-4244-2063-6
Electronic_ISBN :
978-1-4244-2064-3
DOI :
10.1109/ICCCAS.2008.4657735
