DocumentCode :
3191153
Title :
Tutorial 2: Low Voltage Circuit Design Techniques for Sub-32nm Technologies
Author :
Kim, Chong-Kwon
Author_Institution :
Univ. of Minnesota, Minneapolis
fYear :
2008
fDate :
17-19 March 2008
Firstpage :
4
Lastpage :
4
Abstract :
Summary form only given. In order to continue CMOS scaling towards the physical limit, care must be taken to account for each obstacle that is currently impeding our progress. Increased power consumption and faster current transients have deteriorated on-chip power supply integrity. Long term reliability issues such as negative bias temperature instability (NBTI) have become serious problems degrading the performance and yield of high performance systems. This talk will focus on circuit design techniques to deal with power supply noise and aging issues in sub-32nm technologies. First, modeling and design techniques are presented for reliable on-chip power supply delivery. Next, an overview of several reliability mechanisms will be given followed by some recent developments on monitoring techniques to accurately measure and model the circuit aging impact.
Keywords :
CMOS integrated circuits; ageing; integrated circuit design; integrated circuit modelling; integrated circuit reliability; low-power electronics; thermal stability; CMOS scaling; circuit aging; circuit design techniques; current transients; long term reliability; low voltage circuit design techniques; negative bias temperature instability; on-chip power supply delivery; on-chip power supply integrity; power consumption; power supply noise; size 32 nm;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design, 2008. ISQED 2008. 9th International Symposium on
Conference_Location :
San Jose, CA
Print_ISBN :
978-0-7695-3117-5
Type :
conf
DOI :
10.1109/ISQED.2008.4479685
Filename :
4479685
Link To Document :
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