Title :
A Radiation Hardened Nano-Power 8Mb SRAM in 130nm CMOS
Author :
Lysinger, M. ; Roche, P. ; Zamanian, M. ; Jacquet, F. ; Sahoo, N. ; McClure, D. ; Russell, J.
Author_Institution :
STMicroelectron., Carrollton
Abstract :
An eight megabit rad hard SRAM, implemented in 130 nm CMOS technology, uses stacked capacitors within the memory cell for robustness, supply power gating and internally developed array power supplies to achieve very low soft error rates and standby current consumption under 600 nA.
Keywords :
CMOS memory circuits; SRAM chips; capacitors; integrated circuit reliability; low-power electronics; nanoelectronics; radiation hardening (electronics); CMOS technology; internally developed array power supplies; memory cell; nanopower SRAM; radiation hardened SRAM; size 130 nm; stacked capacitors; supply power gating; Batteries; Capacitors; Emergency power supplies; Error analysis; Neutrons; Radiation hardening; Random access memory; Robustness; Testing; Voltage; Rad Hard;
Conference_Titel :
Quality Electronic Design, 2008. ISQED 2008. 9th International Symposium on
Conference_Location :
San Jose, CA
Print_ISBN :
978-0-7695-3117-5
DOI :
10.1109/ISQED.2008.4479692
