Title :
Impedance of GaAs p-i-n diodes
Author_Institution :
Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
Abstract :
A computer model of GaAs p-i-n diodes shows that when the intrinsic-layer (i-layer) thickness is greater than about four times the diffusion length, diode forward resistance can be high. Comparison with measured I-V characteristics suggests that diodes now have i-layers with lifetimes of about 10/sup -7/ s.<>
Keywords :
III-V semiconductors; digital simulation; gallium arsenide; semiconductor device models; semiconductor diodes; solid-state microwave devices; 1E-7 s; GaAs; GaAs p-i-n diodes; computer model; diode forward resistance; impedance; intrinsic layer thickness; measured I-V characteristics; Charge carrier lifetime; Charge carrier processes; Electron mobility; Electron traps; Gallium arsenide; Impedance; Newton method; P-i-n diodes; Silicon; Switches;
Conference_Titel :
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location :
New York, NY, USA
DOI :
10.1109/MWSYM.1988.22153
