DocumentCode
3191672
Title
Effect of heat treatments and window layer processing on the characteristics of CuInGaSe2 thin film solar cells
Author
Ramanathan, K. ; Contreras, M.A. ; Tuttle, J.R. ; Keane, J. ; Webb, J. ; Asher, S. ; Niles, D. ; Dhere, R. ; Tennant, A.L. ; Hasoon, F.S. ; Noufi, R.
Author_Institution
Nat. Renewable Energy Lab., Golden, CO, USA
fYear
1996
fDate
13-17 May 1996
Firstpage
837
Lastpage
840
Abstract
Interaction between chemical bath deposited CdS and ZnO window layers are a focus of this paper. Low temperature anneals were used to follow the changes at the interface. Optical absorption spectra show that CdS and ZnO intermix upon annealing. Heat treatments applied to ZnO/CdS/CuInGaSe2 thin film solar cells produced changes in the short and long wavelength responses. The latter is attributed to an increase in the energy gap of the absorber by diffusion of S, and it is confirmed by SIMS. The interdiffusion is shown to increase the short wavelength collection, and hence the current density of the devices. Photoluminescence data provides some indication of the quality of the interface
Keywords
II-VI semiconductors; annealing; cadmium compounds; chemical interdiffusion; copper compounds; energy gap; gallium compounds; indium compounds; p-n heterojunctions; photoluminescence; semiconductor device testing; semiconductor growth; semiconductor thin films; solar cells; sputter deposition; sputtered coatings; zinc compounds; ZnO-CdS-CuInGaSe2; ZnO/CdS/CuInGaSe2 thin film solar cells; chemical bath deposition; current density; energy gap; heat treatment; interdiffusion; interface quality; low temperature annealing; optical absorption spectra; photoluminescence data; short wavelength collection; wavelength response; window layer processing; Absorption; Annealing; Chemicals; Heat treatment; Optical films; Photovoltaic cells; Solar heating; Temperature; Transistors; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location
Washington, DC
ISSN
0160-8371
Print_ISBN
0-7803-3166-4
Type
conf
DOI
10.1109/PVSC.1996.564258
Filename
564258
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