DocumentCode :
3191857
Title :
Determination of the internal series resistance of CIS and CIGS photovoltaic cell structures
Author :
Delahoy, Alan E. ; Payne, Adam M.
Author_Institution :
Energy Photovoltaics Inc., Princeton, NJ, USA
fYear :
1996
fDate :
13-17 May 1996
Firstpage :
841
Lastpage :
844
Abstract :
A new method is described to determine the internal series resistance of thin film solar cells. The method involves illumination of a small area of the solar cell with light sufficiently intense to make the internal resistance easily observable. For the CIS and CIGS cells examined, specific internal resistances ranging between 7×10-2 and 3×10-4 Ω cm2 were obtained. Such remarkably low values confirm the ability of CIGS to function as a concentrator solar cell
Keywords :
copper compounds; electric resistance measurement; gallium compounds; indium compounds; semiconductor device models; semiconductor device testing; semiconductor thin films; solar cells; ternary semiconductors; CuInGaSe2; CuInGaSe2 solar cells; CuInSe2; CuInSe2 solar cells; concentrator solar cell; illumination; internal series resistance; photovoltaic cell structures; Computational Intelligence Society; Contact resistance; Electric resistance; Laser beams; Optical films; Photoconductivity; Photovoltaic cells; Transistors; Voltage; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
ISSN :
0160-8371
Print_ISBN :
0-7803-3166-4
Type :
conf
DOI :
10.1109/PVSC.1996.564259
Filename :
564259
Link To Document :
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