DocumentCode
3191950
Title
A High Current Gain Horizontal Current Bipolar Transistor (HCBT) Technology for the BiCMOS Integration with FinFETs
Author
Kumar, M. Jagadesh ; Nawal, Susheel ; Grover, Sachit
Author_Institution
Department of Electrical Engineering, Indian Institute of Technology, New Delhi 110 016, India
fYear
2005
fDate
11-13 Dec. 2005
Firstpage
453
Lastpage
456
Abstract
We report a new bipolar transistor structure called the SALTran HCBT with extremely large current gain not reported so far in literature. The complete process steps and the device characteristics are analyzed using two-dimensional process and device simulations. It is also shown that the proposed SALTran HCBT can be fabricated without any additional process complexity.
Keywords
Bipolar transistor; Current gain; Simulation; BiCMOS integrated circuits; Bipolar transistors; Circuit simulation; Doping; Electron emission; Fabrication; FinFETs; MOSFETs; Medical simulation; Substrates; Bipolar transistor; Current gain; Simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
INDICON, 2005 Annual IEEE
Print_ISBN
0-7803-9503-4
Type
conf
DOI
10.1109/INDCON.2005.1590211
Filename
1590211
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