Title :
Electrical characterization of annular through silicon vias for a reconfigurable wafer-sized circuit board
Author :
Diop, Mamadou D. ; Radji, Moufid ; Andre, Walder ; Blaquière, Yves ; Hamoui, Anas A. ; Izquierdo, Ricardo
Author_Institution :
Dept. d´´Inf., Univ. du Quebec a Montreal, Montreal, QC, Canada
Abstract :
This paper presents the electrical characterization of annular TSV technology for full wafer applications. A possible utilization of this technology is the WaferBoard™, a reconfigurable circuit board for rapid system prototyping. Electrical resistance and capacitance of a single 2-4μm thick annular TSV with a diameter of 110μm and a height of 350μm are measured to be about 10mΩ and 0.27pF, respectively. TSV yield of 98% is reached over the wafer. Results also show electrical failure of some TSVs due to poor via filling.
Keywords :
electric resistance; printed circuits; three-dimensional integrated circuits; WaferBoard; annular through silicon vias; electrical capacitance; electrical failure; electrical resistance; rapid system prototyping; reconfigurable wafer-sized circuit board; Copper; Electrical resistance measurement; Integrated circuit interconnections; Resistance; Routing; Silicon; Through-silicon vias; WaferBoard™; annular TSV; component; electrical resistance and capacitance;
Conference_Titel :
Electrical Performance of Electronic Packaging and Systems (EPEPS), 2010 IEEE 19th Conference on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-6865-2
Electronic_ISBN :
978-1-4244-6866-9
DOI :
10.1109/EPEPS.2010.5642596
