DocumentCode :
3191980
Title :
Optical and laser properties of epitaxially grown passively Q-switched Cr4+:GGG/ Nd3+:GGG, Cr4+:YAG/ Yb3+:YAG and Cr4+:YAG/ Nd3+ :YAG microchip lasers
Author :
Kopczynski, K. ; Sarnecki, J. ; Mierczyk, Z. ; Kwasny, M. ; Mlynczak, J. ; Syvorotka, Ihor M.
Author_Institution :
Inst. of Optoelectron., Mil. Univ. of Technol., Warsaw, Poland
fYear :
2003
fDate :
22-27 June 2003
Firstpage :
452
Abstract :
Liquid phase epitaxy technique is used to grow Cr4+ doped GGG and YAG monocrystalline thin films as a saturable absorber for passive Q-switching of Nd:GGG, Yb:YAG and Nd:YAG microchip lasers. Comparison of laser performance and influence of epitaxial film saturable absorber properties on microchip characteristics (repetition rate, pulse energy and pulse length) are reported.
Keywords :
Q-switching; chromium; liquid phase epitaxial growth; microchip lasers; neodymium; optical films; optical saturable absorption; ytterbium; Cr4+:GGG microchip laser; Cr4+:YAG microchip laser; GdGG:Cr4+; GdGG:Nd3+; GdGa5O12:Cr; GdGa5O12:Nd; Nd3+ :YAG microchip laser; Nd3+:GGG microchip laser; YAG:Cr4+; YAG:Nd3+; YAG:Yb3+; YAl5O12:Cr; YAl5O12:Nd; YAl5O12:Yb; Yb3+:YAG microchip laser; liquid phase epitaxy; monocrystalline thin films; passive Q-switching; pulse energy; pulse length; repetition rate; saturable absorber;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics Conference, 2003. EQEC '03. European
Print_ISBN :
0-7803-7733-8
Type :
conf
DOI :
10.1109/EQEC.2003.1314310
Filename :
1314310
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3191980
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