DocumentCode
3192083
Title
Two stage double layer microstrip spatial amplifiers
Author
Ivanov, T. ; Mortazawi, Amir
Author_Institution
Dept. of Electr. and Comput. Eng., Central Florida Univ., Orlando, FL, USA
fYear
1995
fDate
16-20 May 1995
Firstpage
589
Abstract
Several two stage spatial amplifiers are presented. The amplifiers were constructed on double layer back to back microstrip circuits with a shared ground plane. The ground plane provides an effective isolation between the receiving antenna array and the transmitting antenna array. Furthermore, it serves as a heat sink in high-power amplifier design. The coupling between the two stages is accomplished through microstrip to slot transitions, therefore there is no electrical contact from one layer to another. This facilitates monolithic fabrication of such amplifiers. The measured gain of a 3/spl times/3 spatial amplifier at 9.95 GHz is 18.0 dB.<>
Keywords
HEMT circuits; hybrid integrated circuits; microstrip antenna arrays; microstrip circuits; microwave integrated circuits; microwave power amplifiers; power amplifiers; 18 dB; 9.95 GHz; SHF; back to back microstrip circuits; double layer microstrip spatial amplifiers; heat sink; high-power amplifier design; microstrip to slot transitions; receiving antenna array; shared ground plane; transmitting antenna array; two stage spatial amplifiers; Antenna arrays; Antenna measurements; Contacts; Coupling circuits; Fabrication; Heat sinks; High power amplifiers; Microstrip antenna arrays; Receiving antennas; Transmitting antennas;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location
Orlando, FL, USA
ISSN
0149-645X
Print_ISBN
0-7803-2581-8
Type
conf
DOI
10.1109/MWSYM.1995.405937
Filename
405937
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