• DocumentCode
    3192083
  • Title

    Two stage double layer microstrip spatial amplifiers

  • Author

    Ivanov, T. ; Mortazawi, Amir

  • Author_Institution
    Dept. of Electr. and Comput. Eng., Central Florida Univ., Orlando, FL, USA
  • fYear
    1995
  • fDate
    16-20 May 1995
  • Firstpage
    589
  • Abstract
    Several two stage spatial amplifiers are presented. The amplifiers were constructed on double layer back to back microstrip circuits with a shared ground plane. The ground plane provides an effective isolation between the receiving antenna array and the transmitting antenna array. Furthermore, it serves as a heat sink in high-power amplifier design. The coupling between the two stages is accomplished through microstrip to slot transitions, therefore there is no electrical contact from one layer to another. This facilitates monolithic fabrication of such amplifiers. The measured gain of a 3/spl times/3 spatial amplifier at 9.95 GHz is 18.0 dB.<>
  • Keywords
    HEMT circuits; hybrid integrated circuits; microstrip antenna arrays; microstrip circuits; microwave integrated circuits; microwave power amplifiers; power amplifiers; 18 dB; 9.95 GHz; SHF; back to back microstrip circuits; double layer microstrip spatial amplifiers; heat sink; high-power amplifier design; microstrip to slot transitions; receiving antenna array; shared ground plane; transmitting antenna array; two stage spatial amplifiers; Antenna arrays; Antenna measurements; Contacts; Coupling circuits; Fabrication; Heat sinks; High power amplifiers; Microstrip antenna arrays; Receiving antennas; Transmitting antennas;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1995., IEEE MTT-S International
  • Conference_Location
    Orlando, FL, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-2581-8
  • Type

    conf

  • DOI
    10.1109/MWSYM.1995.405937
  • Filename
    405937